Integrated chip package structure using organic substrate and method of manufacturing the same

ABSTRACT

An integrated chip package structure and method of manufacturing the same is by adhering dies on an organic substrate and forming a thin-film circuit layer on top of the dies and the organic substrate. Wherein the thin-film circuit layer has an external circuitry, which is electrically connected to the metal pads of the dies, that extends to a region outside the active surface of the dies for fanning out the metal pads of the dies. Furthermore, a plurality of active devices and an internal circuitry is located on the active surface of the dies. Signal for the active devices are transmitted through the internal circuitry to the external circuitry and from the external circuitry through the internal circuitry back to other active devices. Moreover, the chip package structure allows multiple dies with different functions to be packaged into an integrated package and electrically connecting the dies by the external circuitry.

This application is a continuation of application Ser. No. 10/055,499,filed on Jan. 22, 2002, now pending.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an integrated chip package structureand method of manufacture the same. More particularly, the presentinvention relates to an integrated chip package structure and method ofmanufacture the same using organic substrate.

2. Description of Related Art

In the recent years, the development of advanced technology is on thecutting edge. As a result, high-technology electronics manufacturingindustries launch more feature-packed and humanized electronic productsThese new products that hit the showroom are lighter, thinner, andsmaller in design. In the manufacturing of these electronic products,the key component has to be the integrated circuit (IC) chip inside anyelectronic product.

The operability, performance, and life of an IC chip are greatlyaffected by its circuit design, wafer manufacturing, and chip packaging.For this present invention, the focus will be on chip packagingtechnique. Since the features and speed of IC chips are increasingrapidly, the need for increasing the conductivity of the circuitry isnecessary so that the signal delay and attenuation of the dies to theexternal circuitry are reduced. A chip package that allows good thermaldissipation and protection of the IC chips with a small overalldimension of the package is also necessary for higher performance chips.These are the goals to be achieved in chip packaging.

There are a vast variety of existing chip package techniques such asball grid array (BGA), wire bonding, flip chip, etc . . . for mounting adie on a substrate via the bonding points on both the die and thesubstrate. The inner traces helps to fan out the bonding points on thebottom of the substrate. The solder balls are separately planted on thebonding points for acting as an interface for the die to electricallyconnect to the external circuitry. Similarly, pin grid array (PGA) isvery much like BGA, which replaces the balls with pins on the substrateand PGA also acts an interface for the die to electrically connect tothe external circuitry.

Both BGA and PGA packages require wiring or flip chip for mounting thedie on the substrate. The inner traces in the substrate fan out thebonding points on the substrate, and electrical connection to theexternal circuitry is carried out by the solder balls or pins on thebonding points. As a result, this method fails to reduce the distance ofthe signal transmission path but in fact increase the signal pathdistance. This will increase signal delay and attenuation and decreasethe performance of the chip.

Wafer level chip scale package (WLCSP) has an advantage of being able toprint the redistribution circuit directly on the die by using theperipheral area of the die as the bonding points It is achieved byredistributing an area array on the surface of the die, which can fullyutilize the entire area of the die. The bonding points are located onthe redistribution circuit by forming flip chip bumps so the bottom sideof the die connects directly to the printed circuit board (PCB) withmicro-spaced bonding points.

Although WLCSP can greatly reduce the signal path distance, it is stillvery difficult to accommodate all the bonding points on the die surfaceas the integration of die and internal components gets higher. The pincount on the die increases as integration gets higher so theredistribution of pins in an area array is difficult to achieve. Even ifthe redistribution of pins is successful, the distance between pins willbe too small to meet the pitch of a printed circuit board (PCB).

SUMMARY OF THE INVENTION

Therefore the present invention provides an integrated chip packagestructure and method of manufacturing the same that uses the originalbonding points of the die and connect them to an external circuitry of athin-film circuit layer to achieve redistribution. The spacing betweenthe redistributed bonding points matches the pitch of a PCB.

In order to achieve the above object, the present invention presents anintegrated chip package structure and method of manufacturing the sameby adhering the backside of a die to an organic substrate, wherein theactive surface of the die has a plurality of metal pads. A thin-filmcircuit layer is formed on top of the die and the organic substrate,where the thin-film circuit layer has an external circuitry that iselectrically connected to the metal pads of the die. The externalcircuitry extends to a region that is outside the active area of thedies and has a plurality of bonding pads located on the surface of thethin-film layer circuit. The active surface of the die has an internalcircuitry and a plurality of active devices, where signals can betransmitted from one active device to the external circuitry via theinternal circuitry, then from the external circuitry back to anotheractive device via the internal circuitry. Furthermore, the organicsubstrate has at least one inwardly protruded area so the backside ofthe die can be adhered inside the inwardly protruded area and exposingthe active surface of the die. Wherein the organic substrate is composedof an organic layer and a heat conducting material formed overlappingand the inwardly protruded areas are formed by overlapping the organicsubstrate with openings on the heat conducting layer. Furthermore, thepresent chip package structure allows multiple dies with same ordifferent functions to be packaged into one integrated chip package andpermits electrically connection between the dies by the externalcircuitry.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary, and are intended toprovide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention. In the drawings,

FIG. 1A to 1I are schematic diagrams showing the sectional view of thestructure of the first embodiment of the present invention.

FIG. 2A to 2C are schematic diagrams showing the sectional view of thestructure of the second embodiment of the present invention.

FIG. 2D to 2E are schematic diagrams showing the sectional view of theformation of inwardly protruded areas in the organic substrate of thestructure of the second embodiment of the present invention.

FIG. 3A to 3C are schematic diagrams showing the sectional view of thestructure of the third embodiment of the present invention.

FIG. 4A to 4I are schematic diagrams showing the sectional view of thestructure of the forth embodiment of the present invention.

FIG. 5A to 5E are schematic diagrams showing the sectional view of thestructure of the fifth embodiment of the present invention.

FIG. 6 is a schematic diagram showing the section view of the chippackage structure of a preferred embodiment of the present inventionwith one die.

FIG. 7 is a schematic diagram showing the section view of the chippackage structure of a preferred embodiment of the present inventionwith a plurality of dies.

FIG. 8 is a magnified diagram showing the sectional view of the chippackage structure of a preferred embodiment of the present invention.

FIG. 9A, 9B are schematic diagrams of the top and side view respectivelyof the patterned wiring layer of the thin-film circuit layer with apassive device.

FIG. 10A is a schematic diagram of the formation of a passive device bya single layer of patterned wiring layer of the thin-film circuit layer.

FIG. 10B is a schematic diagram of the formation of a passive device bya double layer of patterned wiring layer of the thin-film circuit layer.

FIG. 11A is a schematic diagram of the formation of a passive device bya single layer of patterned wiring layer of the thin-film circuit layer.

FIG. 11B is a schematic diagram of the formation of a passive device bya double layer of patterned wiring layer of the thin-film circuit layer.

FIG. 11C is a schematic diagram of the formation of a passive device bya double layer of patterned wiring layer of the thin-film circuit layer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Please refer to FIG. 1A, an organic substrate 110 with a surface 112 isprovided. The material of the organic substrate comprises polymer resin,epoxy resin, imide resin, or the like, plastic, or thermosettingplastic. The fabrication of the organic substrates can be accomplishedby existing printed circuit board (PCB) fabrication technique. Themethod includes heat pressing a plurality of insulating core boards orinjection molding to form organic substrate 110.

A plurality of dies 120 having an active surface 122 and a correspondingbackside 124 is provided, where the active devices are formed on activesurface 122 of dies 120. Furthermore, dies 120 have a plurality of metalpads 126 located on active surface 122 of dies 120 acting as the outputterminal of dies 120 to transmit signals to the external circuitry.Backside 124 of dies 120 is adhered to surface 112 of organic substrate110 by a conductive paste or adhesive tape. Therefore, active surface122 of dies 120 is facing upwards along surface 112 of organic substrate110.

Please refer to FIG. 1B, when adhering die 120 to organic substrate 110,a filling layer 130 is formed on top of surface 112 of organic substrate110 surrounding the peripheral of dies 120 to fill the gap between dies120. Wherein the top face of filling layer 130 is approximately planarto active surface 122 of dies 120. The material of filling layer 130 canbe epoxy, polymer, or the like. After curing of filling layer 130, agrinding or etching process is applied to planarize filling layer 130 sothe top face of filling layer 130 is planar to active surface 122 ofdies 120.

Please refer to FIG. 1C, after the formation of filling layer 130 onorganic substrate 110, a dielectric layer 142 is formed on top offilling layer 130 and active surface 122 of dies 120. Dielectric layer142 is patterned according to metal pads 126 on dies 120 to formthru-holes 142 a. The material of dielectric layer 142 can be poly-Imide(PI), benzocyclobutene (BCB), porous dielectric material, stress buffermaterial, or the like. Patternization of dielectric layer 142 can beperformed by photo via, laser ablation, plasma etching, or the like.

Please continue to refer to FIG. 1C, filling layer 130 is used tosupport dielectric layer 142 so dielectric layer 142 can be formedplanarized on top of organic substrate 110 and dies 120 without anuneven surface. As a result, after dielectric layer 142 is formed onsurface 112 of organic substrate 110 and active surface 122 of dies 120,dielectric layer 142 also fills the peripheral of dies 120, meaning thegap between dies 120. Therefore the bottom structure of dielectric layer142 can replace the structure of filling layer 130 covering entirelysurface 112 of organic substrate 110 and surrounding dies 120. Themethod of forming dielectric layer 142 includes first depositing a layerof dielectric layer 142 entirely over dies 120 and organic substrate110, then after curing, grinding or etching process is performed toplanarize dielectric layer 142.

Please refer to FIG. 1D, after forming dielectric layer 142 andpatterning dielectric layer 142 to form thru-holes 142 a, a patternedwiring layer 144 is formed on top of dielectric layer 142 byphotolithography and sputtering, electroplating, or electro-lessplating. Wherein part of the conductive material from patterned wiringlayer 144 will be injected into thru-holes 142 a to form vias 142 b,copper (Cu) is used as the material for patterned wiring layer 144.Moreover, thru-holes 142 a can be pre-filled with a conductive materialsuch as a conductive glue to form vias 142 b. Therefore no matter if thethru-holes are filled with the conductive material from patterned wiringlayer 144 or pre-filled with a conductive material, patterned wiringlayer 144 is electrically connected to metal pads 126 of dies 120. It isto be noted that part of patterned wiring layer 144 extends to a regionoutside active surface 122 of dies 120. Dielectric layer 142 andpatterned wiring layer 144 form a thin-film circuit layer 140.

Please refer to FIG. 1E, after the formation of patterned wiring layer144, another dielectric layer 146 can be formed similarly to dielectriclayer 142 on top of dielectric layer 142 and patterned wiring layer 144.Dielectric layer 146 is also patterned to form thru-holes 146 a, whereasthru-holes 146 a correspond to bonding pads 144 a of patterned wiringlayer 144.

Please refer to FIG. 1F, after the formation and patternization ofdielectric layer 146 to form thru-holes 146 a, a patterned wiring layer148 can be formed on dielectric layer 146 in a similar way as patternedwiring layer 144. Wherein part of the conductive material from patternedwiring layer 148 will be injected into each thru-hole 146 a for forminga via 146 b. By the same token, patterned wiring layer 148 iselectrically connected to patterned wiring layer 144 by vias 146 b, andfurther electrically connected to metal pads 126 of die 120 by vias 142b of thru-hole 142 a. Therefore, thin-film circuit layer 140 furthercomprises dielectric layer 146, a plurality of vias 146 b, and patternedwiring layer 148.

Please continue to refer to FIG. 1F, in order to redistribute all metalpads 126 of dies 120 on organic substrate 110, the number of patternedwiring layers (144, 148 . . . ) and dielectric layers (142, 146 . . .)for electrical insulation may be increased. All patterned wiring layers(144, 148 . . . ) are electrically connected by vias (146 b . . . ) ofthru-holes (146 a . . . ). However if only the first patterned wiringlayer 144 is required to entirely redistribute metal pads 126 of dies120 on organic substrate 110, extra dielectric layers (146) andpatterned wiring layers (148 . . . ) will no longer be required in thestructure. In other words, thin-film circuit layer 140 comprises atleast one dielectric layer 142, one patterned wiring layer 144, and aplurality of vias 142 b. Wherein patterned wiring layer (144, 148 . . .) and vias (142 b, 146 b) of thin-film circuit layer 140 form anexternal circuitry of thin-film circuit layer 140.

Please refer to FIG. 1G, after the formation of patterned wiring layer148, a patterned passivation layer 150 is formed on top of dielectriclayer 146 and patterned wiring layer 148. Patterned passivation layer150 is used to protect patterned wiring layer 148 and expose theplurality of bonding pads 148 a of patterned wiring layer 148, whereassome of bonding pads 148 a are in a region outside active surface 122 ofdies 120. As previously mentioned, the redistribution of metal pads 126on organic substrate 110 requires multiple layers of patterned wiringlayers (144, 148 . . . ) and a patterned passivation layer 150 formed onthe very top, which is furthest away from organic substrate 110.However, if only patterned wiring layer 144 is required to redistributeall metal pads 126 of dies 120 on organic substrate 110, patternedpassivation layer 150 will be formed directly on patterned wiring layer144. The material of patterned passivation layer 150 can be anti-solderinsulating coating or other insulating material.

Please refer to FIG. 1H, after the formation of patterned passivationlayer 150, a bonding point 160 can be placed on bonding pads 148 aserving as an interface for electrically connecting dies 120 to theexternal circuitry. Wherein bonding point 160 illustrated in FIG. 1H isa ball but it is not limited to any formation, which might include abump, pin, or the like. Wherein ball connector maybe solder ball, andbump connector maybe solder bump, gold bump, or the like.

Please refer to FIG. 1I, after the formation of bonding points 160 onbonding pads 148 a, a singularization process of packaged die 120 bymechanical or laser cutting is performed along the dotted line asindicated in the diagram. Afterwards, the chip package structure of thedie is completed.

According to the above, the first embodiment of the present invention isa chip package structure with an organic substrate and a plurality ofdies on the organic substrate. The external circuitry of the thin-filmcircuit layer allows the metal pads of the die to fan out. By formingbonding pads corresponding to the metal pads of the dies such as soldersballs, bumps, or pins as the signal input terminals, the distance of thesignal path is effectively decreased. As a result, signal delay andattenuation are reduced to increase performance of the die.

The present invention uses existing technology on and equipment forfabricating PCB for the fabrication of the organic substrate by heatpressing a plurality of insulating core boards. Alternatively, theorganic substrate can also be fabricated in large volume by injectionmolding. As a result of the low fabrication and material cost of theorganic substrate, the cost of chip packaging is also lowered.

The second embodiment of the present invention differs from the firstembodiment by having inwardly protruded areas in the organic substrate.This area is for placement of the die with the backside of the dieadhered to the bottom of the area so the overall thickness of the chippackage structure is reduced. FIG. 2A to 2C are schematic diagrams ofthe sectional view of the second embodiment illustrating the fabricationof the structure.

Please refer to FIG. 2A, an organic substrate 210 with a surface 212 isprovided. In FIG. 2B, a plurality of inwardly protruded areas 214 isformed on surface 212 of organic substrate 210 by machining such asmilling. The depth of each inwardly protruded area 214 is approximatelyequal to the thickness of die 220, therefore the outline and depth ofinwardly protruded areas 214 will be the same as dies 220 in FIG. 2C. InFIG. 2C, backside 224 of dies 220 is adhered to the bottom of inwardlyprotruded areas 214 so dies 220 are inlayed in inwardly protruded areas214. Active surface 222 of dies 220 is exposed along surface 212 oforganic substrate 210.

An alternative method of forming inwardly protruded areas 214 in organicsubstrate 210 in FIG. 2B is applying the existing technique isfabricating PCB on two core boards: a first organic layer 210 a and asecond organic layer 210 b, as illustrated in FIG. 2D. Organic layer 210a has openings 214 a and by overlapping the first organic layer 210 aand the second organic layer 210 b and heat pressing them together,openings 214 a in organic layer 210 a will form inwardly protruded areas214 in organic layer 210 b as seen before in FIG. 2B, as illustrated inFIG. 2E. The thickness of organic layer 210 a is approximately equal tothat of die 220 so the depth of inwardly protruded areas 214 isapproximately equal to the thickness of die 220.

The structure of the second embodiment of the present invention afterFIG. 2C will follow FIG. 1C to 1I from the first embodiment of thepresent invention, therefore it will not be repeated.

The second embodiment of the present invention is an organic substratewith a plurality of inwardly protruded areas for inlaying dies byadhering the backside of the dies to the bottom of the inwardlyprotruded areas and exposing the active surface of the dies. A thin-filmcircuit layer is formed on top of the dies and the organic substrate tofan out the metal pads of the dies by using the external circuitry ofthe thin-film circuit layer. Due to the inlay of the dies in the organicsubstrate, thinning of the thickness of the chip package structure iseffectively achieved and the surface of the organic substrate providesenough planarity and support for the formation of the thin-film circuitlayer.

The third embodiment of the present invention differs from the secondembodiment of the present invention by using an integrated organicsubstrate with at least one organic layer and one heat conducting layer.FIG. 3A to 3C are schematic diagrams of the sectional view of the thirdembodiment illustrating the fabrication of the structure.

Please refer to FIG. 3A, an integrated organic substrate 310 consists ofan organic layer 310 a with multiple openings 314 a and a heatconducting layer 310 b, wherein the material of heat conducting layer310 b maybe metal. In FIG. 3B, organic layer 310 a is placed overlappingheat conducting layer 31013 so openings 314 a of organic layer 310 aform inwardly protruded areas 314 on heat conducting layer 310 b.Following in FIG. 3C, backside 324 of die 320 is adhered to the bottomof inwardly protruded areas 314 so dies 320 are inlayed in organicsubstrate 310 with active surface 322 of die 320 exposed along surface312 of organic board 310.

The following presents two ways of forming integrated organic substrate310 with inwardly protruded areas 314 as shown in FIG. 3B. In FIG. 3A,organic layer 310 a with openings 314 a is provided, openings 314 a areformed at the same time when organic layer 310 a is formed for exampleby injection molding. In FIG. 3B, organic layer 310 a is overlapped onheat conducting layer 310 b so openings 314 a of organic layer 310 a canform inwardly protruded areas 314 on the surface of heat conductinglayer 310 b.

The structure of the third embodiment of the present invention afterFIG. 3C will follow FIG. 1C to 1I from the first embodiment of thepresent invention, therefore it will not be repeated.

The third embodiment of the present invention is an integrated organicsubstrate with an organic layer with a plurality of openings and a heatconducting layer. The openings in the organic layer will form theinwardly protruded areas in the integrated organic substrate. Thebackside of the die adheres to the bottom of the inwardly protrudedareas so the dies are inlayed in the inwardly protruded areas andexposing the active surface of the dies. This integrated organicsubstrate can efficiently dissipate heat from the dies to the outsidebecause the bottom of the inwardly protruded area is the surface of theheat conducting material. The surface of the organic substrate providesenough planarity and support for the formation of the thin-film circuitlayer.

The fourth embodiment of the present invention is slightly differentfrom the first three embodiments. FIG. 4A to 4E are schematic diagramsof the sectional view of the fourth embodiment illustrating thefabrication of the structure.

Please refer to FIG. 4A, an organic substrate 410 with a first surface412 and a plurality of dies 420 are provided. The dies 420 have anactive surface 422, a backside 424, and a plurality of metal pads 426located on active surface 422. The fourth embodiment of the presentinvention differs from the third embodiment of the present invention byplacing active surface 422 of die 420 downwards facing first surface 412of organic substrate 410.

Please refer to FIG. 4B, a filling layer 430 is formed on top of firstsurface 412 of organic substrate 410 after active surface 422 of die 420is adhered to first surface 412 of organic substrate 410. Filling layer430 covers entirely first surface 412 of organic substrate 410 andsurrounds dies 420. The material of filling layer 430 maybe an oxide,epoxy, or the like.

Please refer to FIG. 4C, after the formation of filling layer 430, aplanarization process such as grinding is performed to planarize fillinglayer 430 and backside 424 of dies 420. Although the thickness of theactive devices and traces (not shown) on active surface 422 of die 420is much less than that of die 420, the thickness of die 420 should notbe too small because cracks or damage to the die will occur duringmachine handling. However the present invention directly adheres activesurface 422 of dies 420 to first surface 412 of organic substrate 410without further machine handling. Afterwards a grinding process isperformed on backside 424 of dies 420 to reduce the thickness of dies420. As a result, dies 420 are ground to a very small thickness allowingthe final chip package structure to be much thinner.

Please refer to FIG. 4D, after the planarization of filling layer 430and dies 420, a second organic substrate 440 with a second surface 442is adhered to filling layer 430 and dies 420 creating a sandwich effectwith filling layer 430 and dies 420 in between two organic substrates410 and 440.

Please refer to FIG. 4E, after the adhesion of second organic substrate440, a grinding or the like process is performed to thin the backside oforganic substrate 410 to achieve a thickness of about 2 microns to 200microns, usually about 20 microns. First organic substrate 410 is usedto provide a planar surface for dies 420 to adhere to and to serve as aninsulating layer. Therefore organic substrate 410 can be replaced bysubstrate made of glass or other organic material.

Please refer to FIG. 4F, after the thinning of first organic substrate410, a plurality of first thru-holes 410 a are formed on first organicsubstrate 410 for exposing metal pads 426 on active surface 422 of die420. First thru-holes 410 a can be formed by machine drilling, laser,plasma etching, or similar methods.

Please refer to FIG. 4G, a first patterned wiring layer 450 is formed onfirst organic substrate 410. Using the same method disclosed in thefirst embodiment of the present invention, first vias 410 b in firstthru-holes 410 a are formed by either filling first thru-holes 410 awith part of the conductive material from patterned wiring layer 450 orpre-filling first thru-holes 410 a with a conductive material before theformation of patterned wiring layer 450. A part of patterned wiringlayer 450 will extend to a region outside active surface 422 of die 420.

Please refer to FIG. 4H, a dielectric layer 462 is formed on firstorganic substrate 410 and first patterned wiring layer 450. Whereindielectric layer 462 is patterned to form a plurality of secondthru-holes 462 a, which correspond to bonding pad 450 a of patternedwiring layer 450.

Please refer to FIG. 4I, a second patterned wiring layer 464 is formedon top of dielectric layer 462. Using the same method as above, secondvias 462 b in thru-holes 462 a can be formed by either filling secondthru-holes 462 a with part of the conductive material from patternedwiring layer or pre-filling second thru-holes 462 a with a conductivematerial before the formation of patterned wiring layer 464. Similarly,in order to redistribute metal pads 426 of dies 420 on second organicsubstrate 440, dielectric layer (462 . . . ), second vias (462 a . . .), and second patterned wiring layer (464 . . . ) can be repeatedlyformed on dies 420 and organic substrate 440. Wherein first organicsubstrate 410, first patterned wiring layer 450, dielectric layer 462 .. . , and second patterned wiring layer 464 . . . form thin-film circuitlayer 460. First vias 410 b, first patterned wiring layer 450, secondvias 462 b . . . , and second patterned wiring layer 464 from theexternal circuitry of thin-film circuit layer 460.

The structure of the fourth embodiment of the present invention afterFIG. 4I will follow FIG. 1G to 1I from the first embodiment of thepresent invention, therefore it will not be repeated.

The fourth embodiment of the present invention is an organic substratewith the active surface of the dies adhered directly to the surface ofthe first organic substrate. A filling layer is formed over the dies andthe organic substrate followed by a planarization and thinning process.Afterwards, a second organic substrate is adhered to the die and thefilling layer. A thinning process of the first organic substrate isperformed and a plurality of thru-holes filled with conductive materialare formed on the first organic substrate. Finally a patterned wiringlayer is formed on the first organic substrate allowing the externalcircuitry of the thin-film circuit layer to extend to a region outsidethe active surface of the die to help fan out the metal pads of the die.

The advantage of this structure is increased surface stability andaccuracy because the active surface of the dies are first adhered to thesurface of the first organic substrate. The thickness of the die can bevery small for reducing the overall thickness of the chip packagebecause no machine handling of dies is required.

The fifth embodiment of the present invention takes the first half ofthe fabrication process from the fourth embodiment of the presentinvention and combines with the second half of the fabrication processfrom the first embodiment of the present invention. FIG. 5A to 5E areschematic diagrams of the sectional view illustrating the fabrication ofthe structure.

Please refer to FIG. 5A, an active surface 522 of dies 520 is adhered toa first surface 512 of a first organic substrate 510. In FIG. 5B, afilling layer 530 is formed on top of dies 520 and first organicsubstrate 510 covering dies 520. In FIG. 5C, a planarization andthinning process of dies 520 and filling layer 530 is performed toplanarize backside 524 of dies 520 and filling layer 530. In FIG. 5D, asecond organic substrate 540 is formed on top of dies 520 and fillinglayer 530 so backside 524 of dies 520 adheres to second organicsubstrate 540. By removing filling layer 530 and first organic substrate510, the metal pads on active surface 522 of dies 520 are exposed. Firstorganic substrate 510 is used to supply a planarized surface (firstsurface 512), and will be removed in later stages of the fabricationprocess. Therefore first organic substrate 510 can be replaced bysubstrates of other materials such as glass, metal, silicon, or otherorganic material.

The structure of the fifth embodiment of the present invention afterFIG. 5E will follow FIG. 1B to 1I of the first embodiment of the presentinvention, therefore it will not be repeated.

The fifth embodiment of the present invention is an organic substratewith the active surface of the dies adhered to the surface of the firstorganic substrate for allowing high surface stability. and accuracy. Asa result, it eliminates the need of machine handling of the dies toachieve a very small thickness of the die for reducing the overallthickness of the chip package.

Furthermore, please refer to FIG. 6, it illustrates the schematicdiagram of the sectional view of the chip package structure 600 of thepresent invention for a single die 620. Die 620 is placed on organicsubstrate 610, and a thin-film circuit layer 640 is formed on top of die620 and organic substrate 610. External circuitry 642 of thin-filmcircuit layer 640 has at least has one patterned wiring layer 642 a anda plurality of vias 642 b. The thickness of the inner traces inside die620 is usually under 1 micron, but because the high amount of tracescollocated together so RC delay is relatively high and the power/groundbus requires a large area. As a result, the area of die 620 is notenough to accommodate the power/ground bus. Therefore the chip packagestructure 600 uses thin-film circuit layer 640 and external circuitry642 with wider, thicker, and longer traces to alleviate the problem.These traces act an interface for transmitting signals for the internalcircuitry of die 620 or the power/ground bus of die 620. This willimprove the performance of die 620.

Please refer to FIG. 8, it illustrates a magnified view of the sectionalview of the chip package structure of the present invention. Activesurface 622 of die 620 has a plurality of active devices 628 a, 628 b,and an internal circuitry 624. The internal circuitry 624 forms aplurality of metal pads 626 on the surface of die 620. Therefore signalsare transmitted from active devices 628 a to external circuitry 642 viainternal circuitry 624 of die 620, and from external circuitry 642 backto another active device 628 b via internal circuitry 624. The traces ofexternal circuitry 642 are wider, longer, and thicker than that ofinternal circuitry 624 for providing an improved transmission path.

Please continue to refer to FIG. 6, external circuitry 642 furthercomprises at least one passive device 644 including a capacitor, aninductor, a resistor, a wave-guide, a filter, a micro electronicmechanical sensor (MEMS), or the like. Passive device 644 can be locatedon a single layer of patterned wiring layer 642 a or between two layersof patterned wiring layers 642 a. In FIG. 9A, 9B, passive device 644 canbe formed by printing or other method on two bonding points on patternedwiring layer 642 a when forming thin-film layer 640. In FIG. 10A, acomb-shape passive device 644 (such as a comb capacitor) is formeddirectly on a single patterned wiring layer. In FIG. 10B, passive device644 (such as a capacitor) is formed between two layers of patternedwiring layers 642 a with an insulating material 646 in between. Whereinthe original dielectric layer (not shown) can replace insulatingmaterial 646. In FIG. 11A, passive device 644 (such as an inductor) isformed by making a single layer of patterned wiring layer 642 a into acircular or square (not shown) spiral. In FIG. 11B, column-shape passivedevice 644 (such as an inductor) is formed by using two layers ofpatterned wiring layers 642 a and a plurality of vias 642 b to surroundan insulating material 646 forming a column. In FIG. 11C,circular-shaped passive device 644 (such as an inductor) is formed byusing slanted traces from two layers of patterned wiring layers and aplurality of vias 642 b to surround an insulating material 646 in acircular manner forming a pie. The above structures allow the originalexternally welded passive devices to be integrated into the inside ofthe chip package structure.

FIG. 6 illustrates a chip package structure 600 for a single die 620 butFIG. 7 illustrates a chip package structure 700 for a plurality of dies.Chip package structure 700 in FIG. 7 differs from chip package structure600 in FIG. 6 by having a die module 720, which comprises at least oneor more dies such as die 720 a, 720 b. Die 720 a, 720 b are electricallyconnected by the external circuitry of the thin-film circuit layer. Thefunction of die 720 a, 720 b can be the same or different and can beintegrated together by external circuitry 742 to form a multi-die module(MCM) by packaging same or different dies into one chip packagestructure. When multiple dies are packaged into the same chip packagestructure, singulation process is performed on the determined number ofdies.

Following the above, the present invention provides a chip packagingmethod by adhering a die to an organic substrate or to an inwardlyprotruded area of an organic substrate, and forming a thin-film circuitlayer with bonding pads and points above the die and organic substrate.This structure can fan out the metal pads on the die to achieve a thinchip package structure with high pin count.

Comparing to the BGA or PGA package technique used in the prior art, thechip package of the present invention is performed directly on the dieand the organic substrate for fanning out the metal pads on the die. Itdoes not require flip chip or wire bonding to connect the die to themicro-spaced contact points of a package substrate or carrier. Thepresent invention can reduce cost because the package substrate withmicro-spaced contacts is very expensive. Moreover the signaltransmission path of the present invention is reduced to lessen theeffect of signal delay and attenuation, which improves the performanceof the die.

FIG. 6 illustrates a chip package structure 600 for a single die 620 butFIG. 7 illustrates a chip package structure 700 for a plurality of dies.Chip package structure 700 in FIG. 7 differs from chip package structure600 in FIG. 6 by having a die module 720, which comprises at least oneor more dies such as die 720 a, 720 b mounted on an organic substrate710. External circuity 742 of thin-film circuit layer 740 has at leasthas one patterned wiring layer 742 a and a plurality of vias 742 b. Die720 a, 720 b are electrically connected by the external circuitry 742 ofthe thin-film circuit layer 740. The function of die 720 a, 720 b can bethe same or different and can be integrated together by externalcircuitry 742 to fonn a multi-die module (MCM) by packaging same ordifferent dies into one chip package structure. When multiple dies arepackaged into the same chip package structure, singulation process isperformed on the determined number of dies.

Furthermore, the third embodiment of the present invention provides anintegrated substrate comprises an organic layer and a heat conductinglayer. A plurality of openings can be pre-formed on the organic layer soinwardly protruded areas are formed for inlaying the die when theorganic layer overlaps the heat conducting layer. The heat conductinglayer helps to dissipate heat to the outside from the die duringoperation, which will effectively increase performance.

The thin-film layer circuit of the present invention is used to transmitsignals between two main active devices inside the die, used as apower/ground bus, or used to add in passive devices. Furthermore, thechip package structure of the present invention can accommodate one ormore dies with similar or different functions. The external circuitry ofthe thin-film circuit layer electrically connects the multiple diestogether and can be used in a MCM package. The chip package structure ofthe present invention adapts the MCM, the external circuitry of thethin-film circuit layer, the passive devices of the external circuitryto form a package that is called “system in package”.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention,In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

1-20. (canceled)
 21. A circuit component comprising: an organicsubstrate; a die over said organic substrate, wherein said die comprisesmultiple active devices; a glass substrate over said die and saidorganic substrate, where a first opening in said glass substrate passesvertically through said glass substrate; and a first interconnectingstructure comprising a first portion in said first opening and a secondportion over said glass substrate, wherein said second portion isconnected to said die through said first portion.
 22. The circuitcomponent of claim 21, wherein said organic substrate comprises aprinted circuit board.
 23. The circuit component of claim 21 furthercomprising a polymer layer between said organic substrate and said glasssubstrate and in contact with a sidewall of said die.
 24. The circuitcomponent of claim 21, wherein said glass substrate has a thicknessbetween 2 and 200 micrometers.
 25. The circuit component of claim 21,wherein said glass substrate has a width greater than that of said die.26. The circuit component of claim 21, wherein said firstinterconnecting structure comprises copper.
 27. The circuit component ofclaim 21, wherein said first interconnecting structure compriseselectroplated copper.
 28. The circuit component of claim 21 furthercomprising a passive device over said glass substrate.
 29. The circuitcomponent of claim 21 further comprising a resistor over said glasssubstrate.
 30. The circuit component of claim 1 further comprising acomb-shaped capacitor over said glass substrate.
 31. The circuitcomponent of claim 21 further comprising a capacitor over said glasssubstrate.
 32. The circuit component of claim 21 further comprising aninductor over said glass substrate.
 33. The circuit component of claim21 further comprising a spiral-shaped inductor over said glasssubstrate.
 34. The circuit component of claim 21 further comprising awave guide over said glass substrate.
 35. The circuit component of claim21 further comprising a filter over said glass substrate.
 36. Thecircuit component of claim 21 further comprising a micro electronicmechanical sensor (MEMS) over said glass substrate.
 37. The circuitcomponent of claim 21 further comprising a dielectric layer over saidglass substrate and said first interconnecting structure.
 38. Thecircuit component of claim 21 further comprising a dielectric layer oversaid glass substrate and said first interconnecting structure and asecond interconnecting structure over said dielectric layer, whereinsaid second interconnecting structure is connected to said firstinterconnecting structure through a second opening in said dielectriclayer.
 39. The circuit component of claim 21 further comprising a goldbump over said glass substrate.
 40. The circuit component of claim 21further comprising a solder bump over said glass substrate.
 41. Thecircuit component of claim 21, wherein said first opening islaser-formed.
 42. The circuit component of claim 21, wherein said firstinterconnecting structure further comprising a third portion verticallyover said glass substrate, but not vertically over said die, whereinsaid third portion is connected to said first portion through saidsecond portion.
 43. A chip package comprising: a glass substrate,wherein a first opening in said glass substrate passes verticallythrough said glass substrate; a die comprising multiple active devices;a first interconnecting structure comprising a first portion in saidfirst opening and a second portion over said glass substrate, whereinsaid second portion is connected to said die through said first portion;and a passive device over said glass substrate, wherein said passivedevice comprises a comb-shaped capacitor.
 44. The chip package of claim43, wherein said die is under said glass substrate.
 45. The chip packageof claim 43, wherein said glass substrate has a thickness between 2 and200 micrometers.
 46. The chip package of claim 43, wherein said glasssubstrate has a width greater than that of said die.
 47. The chippackage of claim 43, wherein said first interconnecting structurecomprises copper.
 48. The chip package of claim 43, wherein said firstinterconnecting structure comprises electroplated copper.
 49. The chippackage of claim 43 further comprising a dielectric layer over saidglass substrate and said first interconnecting structure.
 50. The chippackage of claim 43 further comprising a dielectric layer over saidglass substrate and said first interconnecting structure and a secondinterconnecting structure over said dielectric layer, wherein saidsecond interconnecting structure is connected to said firstinterconnecting structure through a second opening in said dielectriclayer.
 51. The chip package of claim 43 further comprising a gold bumpover said glass substrate.
 52. The chip package of claim 43 furthercomprising a solder bump over said glass substrate.
 53. The chip packageof claim 43, wherein said first opening is laser-formed.
 54. The chippackage of claim 43, wherein said first interconnecting structurefurther comprising a third portion vertically over said glass substrate,but not vertically in line with said die, wherein said third portion isconnected to said first portion through said second portion.